Current induced switching of magnetic domains to a perpendicular configuration

In a ferromagnet--normal-metal--ferromagnet trilayer, a current flowing perpendicularly to the layers creates a torque on the magnetic moments of the ferromagnets. When one of the contacts is superconducting, the torque not only favors parallel or antiparallel alignment of the magnetic moments, as is the case for two normal contacts, but can also favor a configuration where the two moments are perpendicular. In addition, whereas the conductance for parallel and antiparallel magnetic moments is the same, signalling the absence of giant magnetoresistance in the usual sense, the conductance is greater in the perpendicular configuration. Thus, a negative magnetoconductance is predicted, in contrast with the usual giant magnetoresistance.Comment: 4 pages, 3 figures, major rewriting of the technical par

Two-domains bulklike Fermi surface of Ag films deposited onto Si(111)-(7x7)

Thick metallic silver films have been deposited onto Si(111)-(7x7) substrates at room temperature. Their electronic properties have been studied by using angle resolved photoelectron spectroscopy (ARPES). In addition to the electronic band dispersion along the high-symmetry directions, the Fermi surface topology of the grown films has been investigated. Using ARPES, the spectral weight distribution at the Fermi level throughout large portions of the reciprocal space has been determined at particular perpendicular electron-momentum values. Systematically, the contours of the Fermi surface of these films reflected a sixfold symmetry instead of the threefold symmetry of Ag single crystal. This loss of symmetry has been attributed to the fact that these films appear to be composed by two sets of domains rotated 60$^o$ from each other. Extra, photoemission features at the Fermi level were also detected, which have been attributed to the presence of surface states and \textit{sp}-quantum states. The dimensionality of the Fermi surface of these films has been analyzed studying the dependence of the Fermi surface contours with the incident photon energy. The behavior of these contours measured at particular points along the Ag $\Gamma$L high-symmetry direction puts forward the three-dimensional character of the electronic structure of the films investigated.Comment: 10 pages, 12 figures, submitted to Physical Review

Investigation of Single Boron Acceptors at the Cleaved Si:B (111) Surface

The cleaved and (2 x 1) reconstructed (111) surface of p-type Si is investigated by scanning tunneling microscopy (STM). Single B acceptors are identified due to their characteristic voltage-dependent contrast which is explained by a local energetic shift of the electronic density of states caused by the Coulomb potential of the negatively charged acceptor. In addition, detailed analysis of the STM images shows that apparently one orbital is missing at the B site at sample voltages of 0.4 - 0.6 V, corresponding to the absence of a localized dangling-bond state. Scanning tunneling spectroscopy confirms a strongly altered density of states at the B atom due to the different electronic structure of B compared to Si.Comment: 6 pages, 7 figure

Magnetic exchange interaction induced by a Josephson current

We show that a Josephson current flowing through a ferromagnet-normal-metal-ferromagnet trilayer connected to two superconducting electrodes induces an equilibrium exchange interaction between the magnetic moments of the ferromagnetic layers. The sign and magnitude of the interaction can be controlled by the phase difference between the order parameters of the two superconductors. We present a general framework to calculate the Josephson current induced magnetic exchange interaction in terms of the scattering matrices of the different layers. The effect should be observable as the periodic switching of the relative orientation of the magnetic moments of the ferromagnetic layers in the ac Josephson effect.Comment: 12 pages, 7 figure

Para to Ortho transition of metallic dimers on Si(001)

Extensive electronic structure calculations are performed to obtain the stable geometries of metals like Al, Ga and In on the Si(001) surface at 0.5 ML and 1 ML coverages. Our results coupled with previous theoretical findings explain the recent experimental data in a comprehensive fashion. At low coverages, as shown by previous works, `Para' dimers give the lowest energy structure. With increasing coverage beyond 0.5 ML, `Ortho' dimers become part of low energy configurations leading toward a `Para' to `Ortho' transition at 1 ML coverage. For In mixed staggered dimers (`Ortho' and `Para') give the lowest energy configuration. For Ga, mixed dimers are non-staggered, while for Al `Para' to `Ortho' transition of dimers is complete. Thus at intermediate coverages between 0.5 and 1 ML, the `Ortho' and `Para' dimers may coexist on the surface. Consequently, this may be an explanation of the fact that the experimental observations can be successfully interpreted using either orientation. A supported zigzag structure at 0.5 ML, which resembles ${\rm (CH)_x}$, does not undergo a dimerization transition, and hence stays semi-metallic. Also, unlike ${\rm (CH)_x}$ the soliton formation is ruled out for this structure.Comment: 8 pages, 6 figure

Variable-range hopping in quasi-one-dimensional electron crystals

We study the effect of impurities on the ground state and the low-temperature dc transport in a 1D chain and quasi-1D systems of many parallel chains. We assume that strong interactions impose a short-range periodicicity of the electron positions. The long-range order of such an electron crystal (or equivalently, a $4 k_F$ charge-density wave) is destroyed by impurities. The 3D array of chains behaves differently at large and at small impurity concentrations $N$. At large $N$, impurities divide the chains into metallic rods. The low-temperature conductivity is due to the variable-range hopping of electrons between the rods. It obeys the Efros-Shklovskii (ES) law and increases exponentially as $N$ decreases. When $N$ is small, the metallic-rod picture of the ground state survives only in the form of rare clusters of atypically short rods. They are the source of low-energy charge excitations. In the bulk the charge excitations are gapped and the electron crystal is pinned collectively. A strongly anisotropic screening of the Coulomb potential produces an unconventional linear in energy Coulomb gap and a new law of the variable-range hopping $-\ln\sigma \sim (T_1 / T)^{2/5}$. $T_1$ remains constant over a finite range of impurity concentrations. At smaller $N$ the 2/5-law is replaced by the Mott law, where the conductivity gets suppressed as $N$ goes down. Thus, the overall dependence of $\sigma$ on $N$ is nonmonotonic. In 1D, the granular-rod picture and the ES apply at all $N$. The conductivity decreases exponentially with $N$. Our theory provides a qualitative explanation for the transport in organic charge-density wave compounds.Comment: 20 pages, 7 figures. (v1) The abstract is abridged to 24 lines. For the full abstract, see the manuscript (v2) several changes in presentation per referee's comments. No change in result

Optical properties of structurally-relaxed Si/SiO2_2 superlattices: the role of bonding at interfaces

We have constructed microscopic, structurally-relaxed atomistic models of Si/SiO$_2$ superlattices. The structural distortion and oxidation-state characteristics of the interface Si atoms are examined in detail. The role played by the interface Si suboxides in raising the band gap and producing dispersionless energy bands is established. The suboxide atoms are shown to generate an abrupt interface layer about 1.60 \AA thick. Bandstructure and optical-absorption calculations at the Fermi Golden rule level are used to demonstrate that increasing confinement leads to (a) direct bandgaps (b) a blue shift in the spectrum, and (c) an enhancement of the absorption intensity in the threshold-energy region. Some aspects of this behaviour appear not only in the symmetry direction associated with the superlattice axis, but also in the orthogonal plane directions. We conclude that, in contrast to Si/Ge, Si/SiO$_2$ superlattices show clear optical enhancement and a shift of the optical spectrum into the region useful for many opto-electronic applications.Comment: 11 pages, 10 figures (submitted to Phys. Rev. B

Anisotropic optical response of the diamond (111)-2x1 surface

The optical properties of the 2$\times$1 reconstruction of the diamond (111) surface are investigated. The electronic structure and optical properties of the surface are studied using a microscopic tight-binding approach. We calculate the dielectric response describing the surface region and investigate the origin of the electronic transitions involving surface and bulk states. A large anisotropy in the surface dielectric response appears as a consequence of the asymmetric reconstruction on the surface plane, which gives rise to the zigzag Pandey chains. The results are presented in terms of the reflectance anisotropy and electron energy loss spectra. While our results are in good agreement with available experimental data, additional experiments are proposed in order to unambiguously determine the surface electronic structure of this interesting surface.Comment: REVTEX manuscript with 6 postscript figures, all included in uu file. Also available at http://www.phy.ohiou.edu/~ulloa/ulloa.html Submitted to Phys. Rev.

Magnetic relaxation and dipole-coupling-induced magnetization in nanostructured thin films during growth: A cluster Monte Carlo study

For growing inhomogeneous thin films with an island nanostructure similar as observed in experiment, we determine the nonequilibrium and equilibrium remanent magnetization. The single-island magnetic anisotropy, the dipole coupling, and the exchange interaction between magnetic islands are taken into account within a micromagnetic model. A cluster Monte Carlo method is developed which includes coherent magnetization changes of connected islands. This causes a fast relaxation towards equilibrium for irregularly connected systems. We analyse the transition from dipole coupled islands at low coverages to a strongly connected ferromagnetic film at high coverages during film growth. For coverages below the percolation threshold, the dipole interaction induces a collective magnetic order with ordering temperatures of 1 - 10 K for the assumed model parameters. Anisotropy causes blocking temperatures of 10 - 100 K and thus pronounced nonequilibrium effects. The dipole coupling leads to a somewhat slower magnetic relaxation.Comment: 13 pages, 6 figures, revised manuscrip